Memory device being built using carbon nanotubes

A professor at the Bourns College of Engineering is planning to create building blocks for memory devices with the aid of telescoping carbon nanotubes as high speed, low power microswitches. This will enable the use of three stage switches to become part of molecule scale computers. An article on this is expected in the March edition of journal Nanotechnology. Under this design one hollow nanotube is inserted which is closed at both ends into a large one which opens at both ends and a telescoping motion is created using an electrostatic charge. This leads to a conduction pathway with three possible positions. In the future the right material would be required to be selected for the electrodes and the problem of rebounding too needs to be tackled by the nanotube actuator on the electrode. A number of corporate such as IBM, H.P and Motorola have already been attracted by this design. It has a bright future certainly.

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